Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height.
Identifieur interne : 000954 ( Main/Exploration ); précédent : 000953; suivant : 000955Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height.
Auteurs : RBID : pubmed:22446239English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Arsenicals, Indium.
- instrumentation : Luminescent Measurements.
- Light, Quantum Dots.
Abstract
An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.
PubMed: 22446239
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height.</title><author><name sortKey="Haffouz, S" uniqKey="Haffouz S">S Haffouz</name><affiliation wicri:level="1"><nlm:affiliation>Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada. sofiane.haffouz@nrc.ca</nlm:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario</wicri:regionArea></affiliation></author><author><name sortKey="Barrios, P J" uniqKey="Barrios P">P J Barrios</name></author><author><name sortKey="Normandin, R" uniqKey="Normandin R">R Normandin</name></author><author><name sortKey="Poitras, D" uniqKey="Poitras D">D Poitras</name></author><author><name sortKey="Lu, Z" uniqKey="Lu Z">Z Lu</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="RBID">pubmed:22446239</idno><idno type="pmid">22446239</idno><idno type="wicri:Area/Main/Corpus">000E12</idno><idno type="wicri:Area/Main/Curation">000E12</idno><idno type="wicri:Area/Main/Exploration">000954</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenicals (chemistry)</term><term>Indium (chemistry)</term><term>Light</term><term>Luminescent Measurements (instrumentation)</term><term>Quantum Dots</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Arsenicals</term><term>Indium</term></keywords><keywords scheme="MESH" qualifier="instrumentation" xml:lang="en"><term>Luminescent Measurements</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Light</term><term>Quantum Dots</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22446239</PMID><DateCreated><Year>2012</Year><Month>03</Month><Day>26</Day></DateCreated><DateCompleted><Year>2012</Year><Month>09</Month><Day>28</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1539-4794</ISSN><JournalIssue CitedMedium="Internet"><Volume>37</Volume><Issue>6</Issue><PubDate><Year>2012</Year><Month>Mar</Month><Day>15</Day></PubDate></JournalIssue><Title>Optics letters</Title><ISOAbbreviation>Opt Lett</ISOAbbreviation></Journal><ArticleTitle>Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height.</ArticleTitle><Pagination><MedlinePgn>1103-5</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OL.37.001103</ELocationID><Abstract><AbstractText>An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Haffouz</LastName><ForeName>S</ForeName><Initials>S</Initials><Affiliation>Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada. sofiane.haffouz@nrc.ca</Affiliation></Author><Author ValidYN="Y"><LastName>Barrios</LastName><ForeName>P J</ForeName><Initials>PJ</Initials></Author><Author ValidYN="Y"><LastName>Normandin</LastName><ForeName>R</ForeName><Initials>R</Initials></Author><Author ValidYN="Y"><LastName>Poitras</LastName><ForeName>D</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Lu</LastName><ForeName>Z</ForeName><Initials>Z</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Lett</MedlineTA><NlmUniqueID>7708433</NlmUniqueID><ISSNLinking>0146-9592</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Arsenicals</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-11-3</RegistryNumber><NameOfSubstance>indium arsenide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Arsenicals</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Light</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Luminescent Measurements</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Quantum Dots</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>3</Month><Day>27</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>3</Month><Day>27</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>9</Month><Day>29</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">230279</ArticleId><ArticleId IdType="pubmed">22446239</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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